Catalyst-free growth of Sb2Te3 nanowires

被引：4

作者：

Kim, Byeong Geun ^{[1
]}

Kim, Byung-Sung ^{[2
]}

Jeong, Seong-Min ^{[3
]}

Choi, Soon-Mok ^{[3
]}

Whang, Dongmok ^{[2
]}

Lee, Hong-Lim ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea

[3] KICET, Seoul 153801, South Korea

来源：

MATERIALS LETTERS | 2011年 / 65卷 / 05期

关键词：

Nanocrystalline materials; Semiconductors; Sputtering; Thin films; GE2SB2TE5; FILMS; MEMORY;

D O I：

10.1016/j.matlet.2010.12.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, a catalyst-free growth method was discovered to prepare the high-quality single crystal Sb2Te3 nanowires from the Al:Ge:Sb:Te thin films. The diameters of Sb2Te3 nanowires were found to be similar to 100 nm and their lengths were as great as tens of micrometers. The Al content and the annealing temperature play an important role in the growth of Sb2Te3 nanowires. When the Al content (>12.4 at.%) was sufficiently contained in Al:Ge:Sb:Te film, Sb2Te3 nanowires were extruded spontaneously on the surface of thin film with increase in annealing temperatures. Compared with the vapor-liquid-solid method, our method has advantages of low temperature (similar to 300 degrees C) and no impurities, such as a metal catalyst. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：812 / 814

页数：3

共 50 条

[21] Sb2Te3 and Bi2Te3 based thermopower wave sources
Walia, Sumeet
Weber, Rodney
Sriram, Sharath
Bhaskaran, Madhu
Latham, Kay
Zhuiykov, Serge
Kalantar-zadeh, Kourosh
ENERGY & ENVIRONMENTAL SCIENCE, 2011, 4 (09) : 3558 - 3564
[22] Lattice Strain Enhances Thermoelectric Properties in Sb2Te3/Te Heterostructure
Wu, Zhenhua
Chen, Xiang
Mu, Erzhen
Liu, Yang
Che, Zhanxun
Dun, Chaochao
Sun, Fangyuan
Wang, Xinwei
Zhang, Yanliang
Hu, Zhiyu
ADVANCED ELECTRONIC MATERIALS, 2020, 6 (01)
[23] Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al2O3
Hullavarad, S. S.
Hullavarad, N. V.
Vispute, R. D.
Venkatesan, T.
Kilpatrick, S. J.
Ervin, M. H.
Nichols, B.
Wickenden, A. E.
JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (08) : 1209 - 1217
[24] MOVPE deposition of Sb2Te3 and other phases of Sb-Te system on sapphire substrate
Kuznetsov, P. I.
Shchamkhalova, E. S.
Yapaskurt, V. O.
Shcherbakov, V. D.
Luzanov, V. A.
Yakushcheva, G. G.
Jitov, V. A.
Sizov, V. E.
JOURNAL OF CRYSTAL GROWTH, 2017, 471 : 1 - 7
[25] Influence of negative pressure on thermoelectric properties of Sb2Te3
Thonhauser, T
SOLID STATE COMMUNICATIONS, 2004, 129 (04) : 249 - 253
[26] Ac and Dielectric Behavior of Sb2Te3 Single Crystal
Jariwala, Bhakti S.
Shah, D. V.
Vyas, S. M.
Pandya, G. R.
SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B, 2011, 1349 : 1107 - +
[27] Template-free solvothermal synthesis and enhanced thermoelectric performance of Sb2Te3 nanosheets
Sun, Shaolin
Peng, Jing
Jin, Renxi
Song, Shuyan
Zhu, Pinwen
Xing, Yan
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 558 : 6 - 10
[28] Sb2Te3 and Its Superlattices: Optimization by Statistical Design
Behera, Jitendra K.
Zhou, Xilin
Ranjan, Alok
Simpson, Robert E.
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (17) : 15040 - 15050
[29] Microstructure Analysis of ALD Bi2Te3/Sb2Te3 Thermoelectric Nanolaminates
Nminibapiel, David
Zhang, Kai
Tangirala, Madhavi
Baumgart, Helmut
Chakravadhanula, V. S. K.
Kuebel, Christian
Kochergin, Vladimir
ATOMIC LAYER DEPOSITION APPLICATIONS 9, 2013, 58 (10): : 59 - 66
[30] Optimizing the Carrier Density and Thermoelectric Properties of Sb2Te3 Films by Using the Growth Temperature
Duong Van Thiet
Nguyen Van Quang
Nguyen Thi Minh Hai
Nguyen Thi Huong
Cho, Sunglae
Duong Anh Tuan
Dang Duc Dung
Tran Van Tam
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2018, 72 (08) : 915 - 919

← 1 2 3 4 5 →