Catalyst-free growth of Sb2Te3 nanowires

被引：4
|
作者：
Kim, Byeong Geun [1 ]
Kim, Byung-Sung [2 ]
Jeong, Seong-Min [3 ]
Choi, Soon-Mok [3 ]
Whang, Dongmok [2 ]
Lee, Hong-Lim [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea
[3] KICET, Seoul 153801, South Korea
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 05期
关键词：
Nanocrystalline materials; Semiconductors; Sputtering; Thin films; GE2SB2TE5; FILMS; MEMORY;
D O I：
10.1016/j.matlet.2010.12.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, a catalyst-free growth method was discovered to prepare the high-quality single crystal Sb2Te3 nanowires from the Al:Ge:Sb:Te thin films. The diameters of Sb2Te3 nanowires were found to be similar to 100 nm and their lengths were as great as tens of micrometers. The Al content and the annealing temperature play an important role in the growth of Sb2Te3 nanowires. When the Al content (>12.4 at.%) was sufficiently contained in Al:Ge:Sb:Te film, Sb2Te3 nanowires were extruded spontaneously on the surface of thin film with increase in annealing temperatures. Compared with the vapor-liquid-solid method, our method has advantages of low temperature (similar to 300 degrees C) and no impurities, such as a metal catalyst. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：812 / 814
页数：3
相关论文
共 50 条
  • [1] MOCVD Growth of GeTe/Sb2Te3 Core-Shell Nanowires
    Kumar, Arun
    Cecchini, Raimondo
    Wiemer, Claudia
    Mussi, Valentina
    De Simone, Sara
    Calarco, Raffaella
    Scuderi, Mario
    Nicotra, Giuseppe
    Longo, Massimo
    COATINGS, 2021, 11 (06)
  • [2] Fabrication of silica nanotubes using Sb2Te3 nanowires as templates
    Kim, Byeong Geun
    Jeong, Seong-Min
    Choi, Soon-Mok
    Hyun, Sang-Hoon
    Lee, Hong-Lim
    MATERIALS LETTERS, 2012, 79 : 81 - 84
  • [3] Spiral growth of topological insulator Sb2Te3 nanoplates
    Hao, Guolin
    Qi, Xiang
    Fan, Yinping
    Xue, Lin
    Peng, Xiangyang
    Wei, Xiaolin
    Zhong, Jianxin
    APPLIED PHYSICS LETTERS, 2013, 102 (01)
  • [4] Microwave AC Resonance Induced Phase Change in Sb2Te3 Nanowires
    Tse, Pok Lam
    Tian, Fugu
    Mugica-Sanchez, Laura
    Rueger, Oliver
    Undisz, Andreas
    Mothrath, George
    Ronning, Carsten
    Takahashi, Susumu
    Lu, Jia Grace
    NANO LETTERS, 2020, 20 (12) : 8668 - 8674
  • [5] Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films
    K. Rajasekar
    L. Kungumadevi
    A. Subbarayan
    R. Sathyamoorthy
    Ionics, 2008, 14 : 69 - 72
  • [6] Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films
    Rajasekar, K.
    Kungumadevi, L.
    Subbarayan, A.
    Sathyamoorthy, R.
    IONICS, 2008, 14 (01) : 69 - 72
  • [7] Direct growth of Sb2Te3 on graphene by atomic layer deposition
    Zheng, Li
    Cheng, Xinhong
    Cao, Duo
    Wang, Qian
    Wang, Zhongjian
    Xia, Chao
    Shen, Lingyan
    Yu, Yuehui
    Shen, Dashen
    RSC ADVANCES, 2015, 5 (50): : 40007 - 40011
  • [8] Differences in Sb2Te3 growth by pulsed laser and sputter deposition
    Ning, Jing
    Martinez, Jose C.
    Momand, Jamo
    Zhang, Heng
    Tiwari, Subodh C.
    Shimojo, Fuyuki
    Nakano, Aiichiro
    Kalia, Rajiv K.
    Vashishta, Priya
    Branicio, Paulo S.
    Kooi, Bart J.
    Simpson, Robert E.
    ACTA MATERIALIA, 2020, 200 (200) : 811 - 820
  • [9] Growth of Nanolaminates of Thermoelectric Bi2Te3/Sb2Te3 by Atomic Layer Deposition
    Nminibapiel, David
    Zhang, Kai
    Tangirala, Madhavi
    Baumgart, Helmut
    Chakravadhanula, V. S. K.
    Kuebel, Christian
    Kochergin, Vladimir
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (04) : P95 - P100
  • [10] Amorphization dependent recrystallisation of Sb2Te3
    Adanan, Nur Qalishah
    Wredh, Simon
    Yang, Joel K. W.
    Simpson, Robert E.
    JOURNAL OF PHYSICS-MATERIALS, 2025, 8 (02):
12345