2-d imaging of temperature in CF4 plasmas

被引:1
|
作者
Steffens, KL [1 ]
Sobolewski, MA [1 ]
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
关键词
fluorocarbon; imaging optical spectroscopy; planar laser-induced fluorescence (PLIF); plasmas; temperature;
D O I
10.1109/TPS.2005.845310
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Two-dimensional maps of rotational temperature were determined in CF4 plasmas using planar laser-induced fluorescence of CF. Experiments were performed in a capacitively-coupled, parallel plate plasma reactor at pressures from 26.7 Pa (200 mtorr) to 107 Pa (800 mtorr) and powers of 10-30 W. Temperatures, which ranged from 273 K +/- 15 K to 480 K +/- 15 K, increased with pressure and power and were fairly axially symmetric with radial gradients. Temperature gradients, such as those observed here, can have a strong impact on density measurements that probe a single rotational level, as well as on reaction rate constants and interpretation of density gradients.
引用
收藏
页码:370 / 371
页数:2
相关论文
共 50 条
  • [1] DEGRADATION OF POLY(METHYL METHACRYLATE) IN CF4 AND CF4/O2 PLASMAS
    WU, BJ
    HESS, DW
    SOONG, DS
    BELL, AT
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1725 - 1729
  • [2] 2-D imaging of electron temperature in tokamak plasmas
    Munsat, T
    Mazzucato, E
    Park, H
    Domier, CW
    Johnson, M
    Luhmann, NC
    Wang, J
    Xia, Z
    Classen, IGJ
    Donné, AJH
    van de Pol, MJ
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2005, 33 (02) : 466 - 467
  • [3] Measurements of CF2 radicals in CF4 and CF4/H2 electron cyclotron resonance plasmas
    Choi, WS
    Yoo, YS
    Park, CW
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (04) : 529 - 533
  • [4] MODELING OF SILICON ETCHING IN CF4/O2 AND CF4/H2 PLASMAS
    VENKATESAN, SP
    TRACHTENBERG, I
    EDGAR, TF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) : 2280 - 2290
  • [5] DEGRADATION OF POLY(METHYL METHACRYLATE) IN CF4 AND CF4/O2 PLASMAS.
    Wu, B.J.
    Hess, D.W.
    Soong, D.S.
    Bell, A.T.
    1725, (54):
  • [6] Etching characteristics of PECVD-prepared SiN films with CF4/D2 and CF4/H2 plasmas at different temperatures
    Hsiao, Shih-Nan
    Thi-Thuy-Nga Nguyen
    Tsutsumi, Takayoshi
    Ishikawa, Kenji
    Sekine, Makoto
    Hori, Masaru
    2020 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM), 2020,
  • [7] Metastable CF and CF2 molecules in CF4 inductively-coupled plasmas
    Booth, JP
    Corr, C
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2006, 15 (01): : 112 - 116
  • [8] Silicon surfaces treated by CF4, CF4/H-2, and CF4/O-2 rf plasmas: Study by in situ Fourier transform infrared ellipsometry
    Shirafuji, T
    Stoffels, WW
    Moriguchi, H
    Tachibana, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (02): : 209 - 215
  • [9] Characteristics of two-electron-temperature in inductively coupled CF4 plasmas
    Huang, S
    Ning, ZY
    Xin, Y
    Gan, ZQ
    ACTA PHYSICA SINICA, 2004, 53 (10) : 3394 - 3397
  • [10] POLYIMIDE ETCHING IN O2/CF4 RF PLASMAS
    YOGI, T
    SAENGER, K
    PURUSHOTHAMAN, S
    SUN, CP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C471 - C471