Electroluminescence analysis of VOC degradation of individual subcell in GaInP/GaAs/Ge space solar cells irradiated by 1.0 MeV electrons

被引：15

作者：

Yan, G. ^{[1
]}

Wang, Jun-ling ^{[1
]}

Liu, Jun ^{[1
]}

Liu, Yan-yu ^{[1
]}

Wu, Rui ^{[1
]}

Wang, Rong ^{[1
,2
]}

机构：

[1] Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol, Minist Educ, Beijing 100875, Peoples R China

[2] Beijing Radiat Ctr, Beijing 100875, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2020年 / 219卷

基金：

中国国家自然科学基金;

关键词：

GaInP/GaAs/Ge; Open-circuit voltage degradation; Electroluminescence; Capture cross section; Nonradiative recombination centres; INDUCED DEFECTS;

D O I：

10.1016/j.jlumin.2019.116905

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The open-circuit voltage (V-OC) degradation for individual subcell in 1.0 MeV electrons-irradiated GaInP/GaAs/ Ge solar cells has been analyzed using electroluminescence (EL) measurements. By using the relationship between V-OC degradation and electron fluence, the capture cross section of the defects induced by electron irradiation in individual subcells were determined. Furthermore, by comparing the thermal activation energy and capture cross section, a defect located at E-v+0.55 eV styled H2 hole trap is nonradiative recombination centre in GaInP subcell, a defect located at E-C-0.96 eV styled E5 electron trap is nonradiative recombination centre in GaAs subcell, and a defect located at E-C-0.38 eV styled E-center electron trap is nonradiative recombination centre in Ge subcell.

引用

页数：4

共 17 条

[1] Irradiation-induced degradation in solar cell: characterization of recombination centres
Bourgoin, JC
Zazoui, M
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (05) : 453 - 460
[2] Analysis of Radiation Hardness and Subcell I-V Characteristics of GaInP/GaAs/Ge Solar Cells Using Electroluminescence Measurements
Hoheisel, R.
Messenger, S.
Scheiman, D.
Jenkins, P. P.
Walters, R. J.
[J]. PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES, 2012, 8256
[3] Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation
Hu Jianmin
Wu Yiyong
Xiao Jingdong
Yang Dezhuang
Zhang Zhongwei
[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (12) : 1652 - 1656
[4] Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP
Khan, A
Yamaguchi, M
Bourgoin, JC
Ando, K
Takamoto, T
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) : 4263 - 4268
[5] Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells
Khan, A
Yamaguchi, M
Bourgoin, JC
de Angelis, N
Takamoto, T
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (18) : 2559 - 2561
[6] Internal voltages in GaInP/GaInAs/Ge multijunction solar cells determined by electroluminescence measurements
Kirchartz, Thomas
Rau, Uwe
Hermle, Martin
Bett, Andreas W.
Helbig, Anke
Werner, Jurgen H.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (12)
[7] Detailed balance and reciprocity in solar cells
Kirchartz, Thomas
Rau, Uwe
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (12): : 2737 - 2751
[8] Adjusted NIEL calculations for estimating proton-induced degradation of GaInP/GaAs/Ge space solar cells
Ming, Lu
Rong, Wang
Hong, Liu Yun
Tao, Hu Wen
Zhao, Feng
Lei, Han Zhao
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 269 (17) : 1884 - 1886
[9] A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS)
Nyamhere, C.
Das, M.
Auret, F. D.
Chawanda, A.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008, 2008, 5 (02): : 623 - +
[10] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN ELECTRON-IRRADIATED GERMANIUM
POULIN, F
BOURGOIN, JC
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (01): : 15 - 19

← 1 2 →