Influence of heterointerfaces on the performance of Cu(In,Ga)Se2 solar cells with CdS and In(OHx,Sy) buffer layers

被引：27

作者：

Nguyen, Q ^{[1
]}

Orgassa, K ^{[1
]}

Koetschau, I ^{[1
]}

Rau, U ^{[1
]}

Schock, HW ^{[1
]}

机构：

[1] Inst Phys Elect, D-70569 Stuttgart, Germany

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

Cu(In; Ga)Se-2; altenative buffer; interface;

D O I：

10.1016/S0040-6090(03)00156-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article investigates the role of the interfaces of US and In(OHx,S-y) buffer layers in thin film ZnO/buffer/Cu(In,Ga)Se-2 heterojunction solar cells. The presence of acceptor defects at the ZnO/In(OHx,S-y) interface explains the poor performance of solar cells using the In(OHx,S-y) buffers. The standard US buffer has better quality at both interfaces to the ZnO window layer and to the Cu(In,Ga)Se-2 absorber. By using a combination of buffer layers of thin US and In(OHx,S-y), the short circuit current density is improved by 2 mA cm(-2) and thus, the efficiency is 1% higher than that of devices with the standard US buffer. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：330 / 334

页数：5

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