High-efficiency thin-film silicon solar cells realized by integrating stable a-Si:H absorbers into improved device design

被引：67

作者：

Matsui, Takuya ^{[1
]}

Maejima, Keigou ^{[2
]}

Bidiville, Adrien ^{[1
]}

Sai, Hitoshi ^{[1
]}

Koida, Takashi ^{[1
]}

Suezaki, Takashi ^{[2
,3
]}

Matsumoto, Mitsuhiro ^{[2
,4
]}

Saito, Kimihiko ^{[2
,5
]}

Yoshida, Isao ^{[2
]}

Kondo, Michio ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Photovolta Power Generat Technol Res Assoc PVTEC, Tsukuba, Ibaraki 3058568, Japan

[3] Kaneka Corp, Toyooka, Hyogo 6680831, Japan

[4] Panason Corp, Kyoto 6190237, Japan

[5] Fukushima Univ, Fukushima 9601296, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期

关键词：

CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; INTERFACE; LAYERS; TEMPERATURE; OXIDE;

D O I：

10.7567/JJAP.54.08KB10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that thin-film silicon solar cells exhibiting high stabilized efficiencies can be obtained by depositing hydrogenated amorphous silicon (a-Si:H) absorbers using triode-type plasma-enhanced chemical vapor deposition. The improved light-soaking stability and performance of solar cells are also realized by optimizing the device design, such as p and p-i buffer layers. As a result, we attain independently confirmed stabilized efficiencies of 10.1-10.2% for a-Si:H single-junction solar cells (absorber thickness: t(i) = 220-310 nm) and 12.69% for an a-Si:H (t(i) = 350 nm)/hydrogenated microcrystalline silicon (mu c-Si:H) tandem solar cell fabricated using textured SnO2 and ZnO substrates, respectively. The relative efficiency degradations of these solar cells are similar to 10 and 3%, respectively, under 1 sun illumination at 50 degrees C for 1000 h. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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