GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes

被引：4

作者：

Sheikhi, Moheb ^{[1
,2
]}

Xu, Houqiang ^{[1
,2
]}

Jiang, Jie'an ^{[1
,2
,3
]}

Wu, Sudong ^{[1
]}

Yang, Xi ^{[1
]}

Yang, Zhenhai ^{[1
]}

Liao, Mingdun ^{[1
]}

Guo, Wei ^{[1
]}

Ye, Jichun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] ShanghaiTech Univ, Shanghai 201210, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 04期

基金：

中国国家自然科学基金;

关键词：

light-emitting diodes; light extraction efficiency; nanomeshes; ohmic behavior; p-GaN contact; specific contact resistivity; RESISTANCE OHMIC CONTACTS; LIGHT-EMITTING-DIODES; HIGH-PERFORMANCE; FILMS; UNIFORM;

D O I：

10.1002/pssa.201800684

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ni/Au nanomesh (NM) is utilized as the p-type contact in the ultraviolet (UV)-LEDs for improving the light extraction efficiency. The substitution of conventional planar Ni/Au p-type electrode with highly ordered, large scalable Ni/Au NMs results in enhanced light transmission in the p-type contact region of the UV-LEDs. Transmission over 75% is demonstrated for Ni/Au-NM thin film coated sapphire substrate, whereas light is totally blocked by conventional planar Ni/Au thin film. Linearized I-V characteristic between p-GaN and Ni/Au NMs is achieved by appropriate thermal annealing of the contact, and specific contact resistivity of 0.90 omega cm(2) is reported. UV-LED incorporated with Ni/Au NMs exhibits higher output power than that with planar contact due to enhanced light transmission through the metal network structure. Finally, simulation results suggest good agreement with experimental data, illustrating that Ni/Au NMs can serve as a potential candidate in the development of high efficiency UV optoelectronic devices.

引用

页数：8

共 45 条

[1]

Bin Y. U., 2013, J CHANGCHUN U, V2, P58

[2] Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385 nm UV LED for significant emission enhancement [J].