XBn barrier photodetectors for high sensitivity and high operating temperature infrared sensors

被引:142
作者
Klipstein, Philip [1 ]
机构
[1] Semicond Devices, IL-31021 Haifa, Israel
来源
INFRARED TECHNOLOGY AND APPLICATIONS XXXIV, PTS 1 AND 2 | 2008年 / 6940卷
关键词
Shockley-Read-Hall; Generation-Recombination current; diffusion current; dark current; infrared detector; high operating temperature; focal plane array; indium arsenide antimonide; type II superlattice;
D O I
10.1117/12.778848
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A barrier photodetector is a device in which the light is absorbed in a narrow bandgap semiconductor layer whose bands remain essentially flat or accumulated at the operating bias so that all carrier depletion is excluded. In a conventional photodiode below a threshold temperature To, typically 130-150K for MWIR devices, the dark current is due to Generation-Recombination (G-R) centres in the depletion layer. In a barrier detector, the absence of depletion in the narrow bandgap, semiconductor ensures that the G-R contribution to the dark current is negligible. The dark current in the barrier detector is thus dominated by the diffusion component, both above and below To. Therefore, at a given temperature below To, a barrier detector will exhibit a lower dark current than a conventional photodiode with the same cut-off wavelength. Alternatively, for a given dark current, a barrier detector will operate at a higher temperature than a conventional photodiode, provided that this temperature is below To. Device architectures are presented for barrier detectors with photon absorbing layers based on InAs1-xSbx alloys and type-II InAs/GaSb superlattices (T2SL). The thermionic and tunneling components of the dark current are analyzed and shown to be negligible for typical device parameters. An operating temperature of similar to 150K is estimated for a MWIR barrier detector with f/3 optics and a cut-off wavelength of 4.2 mu.
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页数:12
相关论文
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