In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

被引：80

作者：

Fujiwara, Kozo ^{[1
]}

Maeda, Kensaku ^{[1
]}

Usami, Noritaka ^{[1
]}

Sazaki, Gen ^{[1
]}

Nose, Yoshitaro ^{[1
]}

Nomura, Akiko ^{[1
]}

Shishido, Toetsu ^{[1
]}

Nakajima, Kazuo ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

ACTA MATERIALIA | 2008年 / 56卷 / 11期

关键词：

faceted dendrite; solid/liquid interface; silicon; undercooling; twin boundary;

D O I：

10.1016/j.actamat.2008.01.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We directly observed the transition of crystal growth behavior of Si in a low undercooling region. We succeeded in observing the initiation of faceted dendrite growth from a portion of parallel twins with increasing degrees of undercooling. The critical undercooling for growing a faceted dendrite was experimentally determined to be Delta T= 10 K. We also confirmed that parallel twins associated with faceted dendrite growth were formed between grain boundaries and not at grain boundaries during melt growth. The parallel-twin formation was explained in terms of a model of twin formation on the {111} facet plane at the growth interface. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：2663 / 2668

页数：6

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