Study of Interfacial Charge Transfer Bands and Electron Recombination in the Surface Complexes of TCNE, TCNQ, and TCNAQ with TiO2

被引:66
作者
Manzhos, Sergei [1 ]
Jono, Ryota [2 ]
Yamashita, Koichi [2 ]
Fujisawa, Jun-ichi [1 ]
Nagata, Morio [1 ]
Segawa, Hiroshi [1 ]
机构
[1] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan
[2] Univ Tokyo, Sch Engn, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan
关键词
SENSITIZED SOLAR-CELLS; METAL-OXIDES; AB-INITIO; CATECHOL; ADSORPTION; TRANSPORT; SPECTRA;
D O I
10.1021/jp205187a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Upon the formation of the surface complexes of dicyanomethylene compounds (TCNX: TCNE, TCNQ, and TCNAQ) with TiO2 nanoparticles, new visible light absorption bands appear due to interfacial charge-transfer transitions from the TCNX adsorbates to the conduction band of TiO2. The charge-transfer absorption band is significantly changed depending on the kind of TCNX. The spectral region is extended to the near-IR region with increase in the pi-conjugation length of TCNX. Density functional theory calculations using simple model compounds Ti(OH)(3)-O-TCNX- well reproduce the charge-transfer bands and the TCNX dependence and the experimentally observed vibrational spectrum of the TiO2-TCNQ surface complex. We then model the geminate electron recombination from TiO2 to the HOMO level of the TCNX moiety immediately following the charge-transfer transitions. The computed result indicates that the rate of the recombination process is significantly dependent on the kind of TCNX, increasing with the extent of the pi-conjugation of TCNX. This increase competes with the increase in absorbance under AM1.5 irradiation with the size of the system. In particular, the Ti(OH)(3)-O-TCNQ(-) model complex bolsters a much stronger absorbance versus TCNE and is predicted to result in a moderately higher recombination rate in the surface complex, whereas TCNAQ is expected to result in a much higher recombination rate versus TCNQ with an only moderate increase in absorbance.
引用
收藏
页码:21487 / 21493
页数:7
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