Novel techniques and procedures for the assessment of fault current withstand capability of power thyristors

被引:8
作者
Cepek, N [1 ]
机构
[1] Hydro Quebec Res Inst, Montreal, PQ, Canada
关键词
curve fitting; data sheet; fault current; temperature excursion; thermal model; thyristor;
D O I
10.1109/63.750186
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In applications using high-power thyristors, the designer has to make sure that the selected thyristor will, with-stand stresses caused by overloads and fault currents. If the surge current characteristics found in the thyristor data sheet do not provide sufficient information, he has to find the transient excursions in junction temperature that will be caused by the worst expected fault current and then make a judgment on whether or not they can be tolerated. The standard way of predicting changes in junction temperature due to a known current waveshape is to determine the corresponding power loss using the on-state (conduction) characteristic and then find the time trace of the junction temperature using the curve of transient thermal impedance. The calculation procedure based on a superposition method has been in use for some 40 years, An improvement based on current state-of-the-art computer software is overdue. However, the main problem facing the designer is that the information found in contemporary data sheets is often neither sufficient for a meaningful calculation nor for deciding whether or not the calculated temperature excursions can be tolerated. This paper deals with three subjects. First, it shows the application engineer how to use off-the-shelf computer software for more accurate and much easier prediction of junction temperature excursions. Second, it advises what to do with the results, Finally, it points to the pieces of information which are needed in the process and which should therefore be found in data sheets of all high-power thyristors. The proposed method for calculation of temperature excursions in high-power thyristors is also applicable to other electrical apparatuses such as ZnO arresters, transformers, electric machines, etc.
引用
收藏
页码:323 / 328
页数:6
相关论文
共 12 条
[1]  
CHESTER JK, 1979, IEEE C PUBLICATION, V154
[2]  
CHESTER JK, 1993, IEEE C THERM MAN POW, V65, P3
[3]  
*GEN EL, 1979, SCR MAN
[4]  
GUTZWILLER FW, 1960, AIEEE T 1, V79, P699
[5]  
*JAND SCI, 1996, SIGM 3
[6]  
MOTTO JW, 1996, IEEE IAS ANN M SAN D, P959
[7]  
PEREIRA M, 1995, 1 INT C DIG POW SYST
[8]   POWER SEMICONDUCTORS EMPIRICAL DIAGRAMS EXPRESSING LIFE AS A FUNCTION OF TEMPERATURE EXCURSION [J].
SOMOS, IL ;
PICCONE, DE ;
WILLINGER, LJ ;
TOBIN, WH .
IEEE TRANSACTIONS ON MAGNETICS, 1993, 29 (01) :517-522
[9]  
*SPECTR, 1996, MICR 5
[10]  
THIELE G, 1997, 113 CIGRE