Novel Optical Sensor Based on Zinc Phthalocyanine

被引：4

作者：

Gupta, R. K. ^{[1
]}

Tuncer, H. ^{[2
]}

Al-Ghamdi, Ahmed A. ^{[3
]}

Yol, S. ^{[2
]}

Dere, Aysegul ^{[4
]}

Yakuphanoglu, F. ^{[3
]}

Farooq, W. A. ^{[5
]}

机构：

[1] Pittsburg State Univ, Dept Chem, Pittsburg, KS 66762 USA

[2] Firat Univ, Dept Chem, Fac Sci, TR-23169 Elazig, Turkey

[3] King Abdulaziz Univ, Dept Phys, Fac Sci, Jeddah 21589, Saudi Arabia

[4] Firat Univ, Dept Phys, Fac Sci, TR-23169 Elazig, Turkey

[5] King Saud Univ, Dept Phys & Astron, Coll Sci, Riyadh 11451, Saudi Arabia

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2014年 / 9卷 / 05期

关键词：

Zn-Pc; Photodiodes; Junction Properties; Current-Voltage; Capacitance; DIODE;

D O I：

10.1166/jno.2014.1660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc-based phthalocyanines have been attracted considerable research intrest for their applications in p-n junctions and dye-sensitized solar cells. In the present work, we have investigated the properties of Zn-Pc for optical sensor applications. The current voltage (I-V) characteristics of the Zn-Pc/p-Si junction were studied under dark and various light intensities. The ideality factor and barrier height of the diode was observed to be 3.58 and 0.63 eV, respectively. It was observed that the photocurrent of the device increases with increase in light intensity. The transient photo-current, capacitance, and conductance measurement were performed to study the effect of transienet photo on the junction properties of the device. The present study suggests that Zn-Pc could be used as photosensor.

引用

页码：709 / 713

页数：5

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