Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses

被引:196
作者
Si, Junjie [1 ]
Liu, Yang [1 ]
He, Zhuofei [2 ]
Du, Hui
Du, Kai [1 ,3 ]
Chen, Dong [2 ]
Li, Jing [4 ]
Xu, Mengmeng [6 ,7 ]
Tian, He [3 ]
He, Haiping [4 ]
Di, Dawei [5 ]
Ling, Changqing [6 ,7 ]
Cheng, Yingchun [6 ,7 ]
Wang, Jianpu [6 ,7 ]
Jin, Yizheng [2 ]
机构
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Ctr Chem High Performance & Novel Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Dept Chem, State Key Lab Silicon Mat, Ctr Chem High Performance & Novel Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Ctr Elect Microscope, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[4] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[5] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 OHE, England
[6] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, KLOFE, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China
[7] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, IAM, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
perovskite; light-emitting diode; in situ grown; nanoplate; color purity; quantum well; efficiency; CESIUM LEAD HALIDE; PEROVSKITES; BRIGHT; VOLTAGE;
D O I
10.1021/acsnano.7b05191
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a facile solution-based approach to the in situ growth of perovskite films consisting of monolayers of CsPbBr3 nanoplates passivated by bulky phenylbutylammonium (PBA) cations, that is, two-dimensional layered PBA(2)(CsPbBr3)(n-1)PbBr4 perovskites. Optimizing film formation processes leads to layered perovskites with controlled n values in the range of 12-16. The layered perovskite emitters show quantum-confined band gap energies with a narrow distribution, suggesting the formation of thickness-controlled quantum-well (TCQW) structures. The TCQW CsPbBr3 films exhibit smooth surface features, narrow emission line widths, low trap densities, and high room-temperature photoluminance quantum yields, resulting in high-color-purity green light-emitting diodes (LEDs) with remarkably high external quantum efficiencies (EQEs) of up to 10.4%. The solution-based approach is extended to the preparation of TCQW CsPbI3 films for high-color-purity red perovskite LEDs with high EQEs of up to 7.3%.
引用
收藏
页码:11100 / 11107
页数:8
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