Large-grained poly-Si films on ZnO:Al coated glass substrates

被引：20

作者：

Lee, K. Y. ^{[1
]}

Muske, M. ^{[1
]}

Gordon, I. ^{[2
]}

Berginski, M. ^{[3
]}

D'Haen, J. ^{[2
]}

Huepkes, J. ^{[3
]}

Gall, S. ^{[1
]}

Rech, B. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

[2] IMEC, B-3001 Louvain, Belgium

[3] Forschungszentrum Julich, Inst Photovolta, D-52425 Julich, Germany

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 20期

关键词：

aluminium-induced layer exchange; ZnO : Al coated glass; preferential (001) orientation;

D O I：

10.1016/j.tsf.2007.12.128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film polycrystalline silicon (poly-Si) films have been fabricated by the aluminium-induced layer exchange (ALILE) process on ZnO:Al coated glass. The formation of the poly-Si films was observed during the annealing process using an optical microscope. Poly-Si films formed on ZnO:l coated glass consist of high-quality poly-Si material, as evidenced by Raman measurement. The average grain size of the poly-Si films slightly increases with decreasing annealing temperature. The formation of poly-Si films on ZnO:Al coated glass led to a preferential (001) orientation at all annealing temperatures (425 degrees C similar to 525 degrees C). (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：6869 / 6872

页数：4

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