Study of Atomic Layer Deposition of hafnium oxide as an insulation layer on Cu for potential flip chip integration

被引：0

作者：

Kawai, Alaric Yohei ^{[1
]}

Kataza, Shingo ^{[2
]}

Shoji, Shuichi ^{[1
]}

Mizuno, Jun ^{[3
]}

机构：

[1] Waseda Univ, Dept Elect & Phys Syst, Shinjuku Ku, Tokyo, Japan

[2] Aishin Ironworks, Niihama, Ehime, Japan

[3] Waseda Univ, Res Org Nano & Life Innovat, Shinjuku Ku, Tokyo, Japan

来源：

2021 IEEE CPMT SYMPOSIUM JAPAN (ICSJ) | 2021年

关键词：

Atomic Layer Deposition; thin films; insulation; Cu oxidation; CORROSION; COPPER;

D O I：

10.1109/ICSJ52620.2021.9648884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra thin films of hafnium oxide were deposited on copper using Atomic Layer Deposition. The physical insulation provided by the film was tested using Neutral Salt Spray testing. We examine the role of the thin film in preventing the oxidation of Cu.

引用

页码：94 / 97

页数：4

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