Direct micro-structuring of Si(111) surfaces through nanosecond laser Bessel beams

被引:4
作者
Demirci, Erkan [1 ]
Kaya, Elif Turkan Aksit [1 ]
Sahin, Ramazan [2 ]
机构
[1] TUBITAK, Informat & Informat Secur Res Ctr, BILGEM, TR-41470 Gebze, Turkey
[2] Akdeniz Univ, Dept Phys, TR-07058 Antalya, Turkey
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 06期
关键词
Bessel beam; Nanosecond laser; Si wafer; Ablation; Micro-structuring; ND-YAG LASER; FEMTOSECOND LASER; SILICON SURFACE; ABLATION; QUALITY; FABRICATION;
D O I
10.1007/s00339-020-03608-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a nanosecond laser ablation of Si(111) surfaces with diffraction-free (Bessel J(0)) beams. Experimental results compared with theoretical predictions show that Bessel beams give possibility of straightforward micro-structuring of Si(111). Only central spot could damage the surface provided that the laser pulse energy is in the energy range we confirmed in our experiments. Moreover, our results clearly indicate that reduced heat-affected zone area due to thermal expansion in ns pulse regime is natural outcome of Bessel beams as opposed to Gaussian beams. This method is open to be improved by using high-quality Gaussian beams (M-2 approximate to 1) while the size of structures can be much reduced by using larger base angle of the Axicon (such as alpha = 40 degrees).
引用
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页数:9
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