Ge-channel p-MOSFETs with ZrO2 gate dielectrics

被引：21
作者：
Mandal, SK [1 ]
Chakraborty, S [1 ]
Maiti, CK [1 ]
机构：
[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 81卷 / 2-4期
关键词：
strained-Ge; SiGe; high-k gate dielectric; ZrO2; Ge-MOSFET simulation;
D O I：
10.1016/j.mee.2005.03.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Germanium MOS capacitors with a thin high-kappa (ZrO2) dielectric (EOT 2.2 nm) were fabricated on epitaxial strained-Ge grown on relaxed-SiGe substrates. Strained-Ge material parameters were extracted from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MOS capacitors and were used in the simulation of strained-Ge channel p-MOSFETs with high-kappa gate dielectric. The simulated devices exhibited a sub-100 mV/decade subthreshold voltage swing and a low gate leakage. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：206 / 211
页数：6
相关论文
共 12 条
[1]  
Bai W.P., 2003, 2003 Symposiums on VLSI Technology, P121
[2]   Highly conformal ZrO2 deposition for dynamic random access memory application [J].
Chang, JP ;
Lin, YS .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2964-2969
[3]  
Chui CO, 2002, IEEE ELECTR DEVICE L, V23, P473, DOI [10.1109/LED.2002.801319, 10.1009/LED.2002.801319]
[4]  
Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872
[5]  
Huang CH, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P319
[6]  
LOW T, 2003, IEEE VLSI, P117
[7]  
Nicollian E.H., 1982, MOS METAL OXIDE SEMI, P222
[8]  
Ritenour A, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P433
[9]  
SCHRODER DK, 1998, SEMICONDUCTOR MAT DE, P378
[10]   Electrical characterization of germanium p-channel MOSFETs [J].
Shang, H ;
Okorn-Schimdt, H ;
Ott, J ;
Kozlowski, P ;
Steen, S ;
Jones, EC ;
Wong, HSP ;
Hanesch, W .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :242-244
12