Efficient light emission from hybrid inorganic/organic semiconductor structures by energy level optimization

被引：0

作者：

Schlesinger, R. ^{[1
,2
]}

Bianchi, F. ^{[1
,2
]}

Blumstengel, S. ^{[1
,2
]}

Kobin, Bjoern ^{[2
,4
]}

Moudgil, K. ^{[5
,6
]}

Barlow, S. ^{[5
,6
]}

Hecht, S. ^{[2
,4
]}

Marder, S. R. ^{[5
,6
]}

Koch, N. ^{[1
,2
,3
]}

机构：

[1] Humboldt Univ, Inst Phys, Brook Taylor Str 6, D-12489 Berlin, Germany

[2] Humboldt Univ, IRIS Adlershof, Brook Taylor Str 6, D-12489 Berlin, Germany

[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, Albert Einstein Str 15, D-12489 Berlin, Germany

[4] Humboldt Univ, Inst Chem, Brook Taylor Str 2, D-12489 Berlin, Germany

[5] Georgia Inst Technol, Sch Chem & Biochem, 901 Atlantic Dr, Atlanta, GA 30332 USA

[6] Georgia Inst Technol, Ctr Organ Photon & Elect, 901 Atlantic Dr, Atlanta, GA 30332 USA

来源：

OXIDE-BASED MATERIALS AND DEVICES VII | 2016年 / 9749卷

关键词：

Hybrid inorganic organic systems; efficient energy transfer; energy level alignment; photoelectron spectroscopy; QUANTUM-WELL;

D O I：

10.1117/12.2217006

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Innovative hybrid inorganic/organic structures (HIOS) should implement exciton creation by electrical injection in inorganic semiconductors followed by resonant energy transfer and light emission from the organic semiconductor. An inherent obstacle of such designs is the typically unfavorable energy level alignment at HIOS interfaces, which assists in exciton separation thus quenching light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels: ZnO and a tailored ladder-type oligophenylene. Using an organometallic donor interlayer the ZnO work function is substantially lowered eliminating the ZnO - L4P-sp3 interfacial energy level offsets enhancing the hybrid structure's radiative emission yield sevenfold.

引用

页数：5

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