Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

被引：25

作者：

Lee, Heesoo ^{[1
]}

Chang, Ki Soo ^{[2
]}

Tak, Young Jun ^{[1
]}

Jung, Tae Soo ^{[1
]}

Park, Jeong Woo ^{[1
]}

Kim, Won-Gi ^{[1
]}

Chung, Jusung ^{[1
]}

Jeong, Chan Bae ^{[2
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 120749, South Korea

[2] Korea Basic Sci Inst, Div Sci Instrumentat, 169-148 Gwahak Ro, Daejeon 305806, South Korea

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1038/srep35044

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 degrees C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 degrees C to 130 degrees C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 degrees C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 degrees C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

引用

页数：10

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