Effect of thickness of ultra-thin tin oxide film based gas sensors

被引：6

作者：

Bukauskas, V. ^{[1
]}

Olekas, A. ^{[1
]}

Senuliene, D. ^{[1
]}

Strazdiene, V. ^{[1
]}

Setkus, A. ^{[1
]}

Kaciulis, S. ^{[2
]}

Pandolfi, L. ^{[2
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] CNR, ISMN, I-00016 Rome, Italy

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2007年 / 47卷 / 04期

关键词：

gas sensors; metal oxide; resistance response; thickness effect; morphology;

D O I：

10.3952/lithjphys.47415

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ultra-thin tin oxide films (of 1-40 nm thickness) for gas sensing were grown by dc-magnetron sputtering. Stoichiometric and stable SnO films were characterized by unexpected dependence of the clean air resistance and the resistance response to H-2, NO2 gases on the average thickness of the film. The response to gas significantly increased in the extremely thin films. The rate of the sensor response to gas was independent of the thickness. The morphology and chemical composition of the films was analysed by scanning probe microscopy (SPM) and X-ray photoelectron spectroscopy (XPS). The mechanism of the thickness effect on the sensor properties is discussed within the context of development of the part per billion-sensitive miniaturized sensors.

引用

页码：475 / 483

页数：9

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