Characterization of solar cells by optical spectroscopic techniques

被引:0
作者
Xu, HY [1 ]
Xue, C
Papadimitriou, D
机构
[1] Natl Tech Univ Athens, Dept Chem Engn, GR-15780 Athens, Greece
[2] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece
来源
ISTM/2003: 5TH INTERNATIONAL SYMPOSIUM ON TEST AND MEASUREMENT, VOLS 1-6, CONFERENCE PROCEEDINGS | 2003年
关键词
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Photoreflectance (PR), electroreflectance (ER), photoluminescence (PL), and surface photovoltage spectroscopy (SPV) were applied at room temperature (RT) to characterize ZnO/CdS/CuGaSe2 based solar cells deposited on Mo/glass substrates. These techniques are complementary and yield information about structural, optical and electronic properties of the cell. The PL and ER bands showed contributions of both the CdS and the underlying CuGaSe2 layer. The valence band edge structure was obtained from the ER spectra and was confirmed by low temperature (LT) PR spectroscopy. The band gap of CuGaSe2 was estimated by fitting the LT PR spectra and from the absorption edge of the SPV spectrum. Moreover, the CuGaSe2 layer thickness was calculated from the interference fringes of the PR and ER spectra in the spectral region below the material band gap.
引用
收藏
页码:3517 / 3519
页数:3
相关论文
共 7 条
  • [1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
    ASPNES, DE
    [J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
  • [2] BLOSS WH, 1984, P 17 IEEE PVSC IEEE, P715
  • [3] THE USE OF INFRARED INTERFERENCE SPECTRA TO MEASURE CERAMIC COATING THICKNESS IN A CVD-REACTOR
    CLARK, TJ
    BANASH, MA
    CRUSE, RW
    FECH, J
    MININNI, RM
    ROHMAN, SJ
    [J]. THIN SOLID FILMS, 1995, 254 (1-2) : 7 - 9
  • [4] Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO
  • [5] 2-G
  • [6] CONTRERAS MA, 1994, P 1 WORLD C PHOT EN, P68
  • [7] NADENAU V, 1997, P 14 EUR PHOT SOL EN, P1250