Heat-resistance epoxy shape memory (SM) materials were prepared based on diglycidylether of bisphenol A (DGEBA) epoxy resin with the mixture of 4,4'-diaminodiphenylether (DDM) and phthalide-containing aromatic amine (PBMI-DDM), which was synthesized by Michael addition of 3,3-bis[4-(4-maleimido phenoxy)phenyl]-phthalide (PBMI) and DDM, in different molar ratios as curing agents. The chemical structure of PBMI-DDM was confirmed by Fourier transform infrared (FTIR) and nuclear magnetic resonance (NMR) spectra. The dynamical mechanical behavior and high-temperature tensile properties, and the influence of PBMI-DDM content and number of cycles on SM performance were investigated in detail. With increasing PBMI-DDM content, the glass transition temperatures (T-g) decreased, damping loss factors increased, and shape recovery ratio (R-r) and shape fixity ratio (R-f) were improved significantly. R-r and R-f of the pure PBMI-DDM cured epoxy resins are both lager than 90% with a deformation strain above 15%. The T-g and activation energies (Delta E) of alpha-relaxation for the epoxy system with unstable SM performance are constantly increased with SM cycles due to the adjustment and rearrangement of network chains.
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Di Prima, M. A.
;
Lesniewski, M.
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Lesniewski, M.
;
Gall, K.
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Gall, K.
;
McDowell, D. L.
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
McDowell, D. L.
;
Sanderson, T.
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Raytheon Missile Syst, Tucson, AZ 85706 USA
Univ Arizona, Sch Aerosp & Mech Engn, Tucson, AZ 85721 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Sanderson, T.
;
Campbell, D.
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Compostie Technol Dev, Lafayette, CO 80026 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Di Prima, M. A.
;
Lesniewski, M.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Lesniewski, M.
;
Gall, K.
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h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Gall, K.
;
McDowell, D. L.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
McDowell, D. L.
;
Sanderson, T.
论文数: 0引用数: 0
h-index: 0
机构:
Raytheon Missile Syst, Tucson, AZ 85706 USA
Univ Arizona, Sch Aerosp & Mech Engn, Tucson, AZ 85721 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Sanderson, T.
;
Campbell, D.
论文数: 0引用数: 0
h-index: 0
机构:
Compostie Technol Dev, Lafayette, CO 80026 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA