Preparation of n-type Bi-Sb-Te thermoelectric material by mechanical alloying

被引:14
作者
Martin-Lopez, R [1 ]
Lenoir, B [1 ]
Dauscher, A [1 ]
Scherrer, H [1 ]
Scherrer, S [1 ]
机构
[1] Ecole Mines, INPL, UHP,Lab Phys Mat, CNRS,UMR 7556, F-54042 Nancy, France
关键词
semiconductors;
D O I
10.1016/S0038-1098(98)00370-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The study of the Bi-Sb-Te ternary phase diagram allowed us to identify a zone in the Te-rich side of the diagram where n-type materials can be obtained. The solid solutions of Bi-Sb-Te were synthesized by mechanical alloying with a 10:1 ball to powder weight ratio. Two solid solutions showing n-type conductivity were found. They exhibit very promising carrier concentration values for thermoelectric applications. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:285 / 288
页数:4
相关论文
共 50 条
  • [21] THE EFFECT OF EXCESS TELLURIUM ON THE THERMOELECTRIC PROPERTIES OF BI2TE3-SB2TE3 SOLID-SOLUTIONS
    HA, HP
    CHO, YW
    BYUN, JY
    SHIM, JD
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1994, 55 (11) : 1233 - 1238
  • [22] Understanding the Effects of Molecular Dopant on n-Type Organic Thermoelectric Properties
    Un, Hio-Ieng
    Gregory, Shawn A.
    Mohapatra, Swagat K.
    Xiong, Miao
    Longhi, Elena
    Lu, Yang
    Rigin, Sergei
    Jhulki, Samik
    Yang, Chi-Yuan
    Timofeeva, Tatiana V.
    Wang, Jie-Yu
    Yee, Shannon K.
    Barlow, Stephen
    Marder, Seth R.
    Pei, Jian
    ADVANCED ENERGY MATERIALS, 2019, 9 (24)
  • [23] Properties of p- and n-Type PbTe Microwires for Thermoelectric Devices
    Rudra P. Bhatta
    Mark Henderson
    Andreza Eufrasio
    Ian L. Pegg
    Biprodas Dutta
    Journal of Electronic Materials, 2014, 43 : 4056 - 4063
  • [24] Properties of p- and n-Type PbTe Microwires for Thermoelectric Devices
    Bhatta, Rudra P.
    Henderson, Mark
    Eufrasio, Andreza
    Pegg, Ian L.
    Dutta, Biprodas
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (11) : 4056 - 4063
  • [25] Synthesis and Thermoelectric Properties of n-Type Mg2Si
    Jung, Jae-Yong
    Kim, Il-Ho
    ELECTRONIC MATERIALS LETTERS, 2010, 6 (04) : 187 - 191
  • [26] B←N-Incorporated Dibenzo-azaacenes as n-Type Thermoelectric Materials
    Min, Yang
    Dong, Changshuai
    Tian, Hongkun
    Liu, Jun
    Wang, Lixiang
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (28) : 33321 - 33327
  • [27] Air-Stable n-Type Thermoelectric Materials Enabled by Organic Diradicaloids
    Yuan, Dafei
    Guo, Yuan
    Zeng, Yan
    Fan, Qingrui
    Wang, Jianjun
    Yi, Yuanping
    Zhu, Xiaozhang
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2019, 58 (15) : 4958 - 4962
  • [28] Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences
    Sakamoto, Tatsuya
    Iida, Tsutomu
    Kurosaki, Shota
    Yano, Kenji
    Taguchi, Hirohisa
    Nishio, Keishi
    Takanashi, Yoshifumi
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (05) : 629 - 634
  • [29] Exploration of the strain and thermoelectric properties of hexagonal SiX (X = N, P, As, Sb, and Bi) monolayers
    Somaiya, Radha N.
    Sonvane, Yogesh Ashokbhai
    Gupta, Sanjeev K.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (07) : 3990 - 3998
  • [30] Effects of crystal-alignment and grain shape on the thermoelectric properties of Bi0.5Sb1.5Te3 alloys
    Je, Koo-Chul
    Ko, Beyungduk
    Kim, Cham
    Kim, Hoyoung
    Kim, Dong-Hwan
    JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 517 : 75 - 79