Si-based Photodetectors in Optical Communication

被引：0
|
作者：
Das, N. R. [1 ]
机构：
[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, India
来源：
2009 INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN ELECTRONIC AND PHOTONIC DEVICES AND SYSTEMS (ELECTRO-2009) | 2009年
关键词：
Si-photodetector; SiGe; Si-CMOS; Optical detector; HIGH-SPEED; SILICON; BANDWIDTH; PHOTODIODES; PERFORMANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.
引用
收藏
页码：436 / 441
页数：6
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