Violet luminescence in phosphorus-doped ZnO epitaxial films

被引：22

作者：

Allenic, A. ^{[1
]}

Pan, X. Q. ^{[1
]}

Che, Y. ^{[2
]}

Hu, Z. D. ^{[2
]}

Liu, B. ^{[2
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] IMRA Amer Inc, Funct Mat Grp, Ann Arbor, MI 48105 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2834696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A violet luminescence band at 3.1099 eV was observed at 12.5 K in phosphorus-doped ZnO epitaxial films deposited by O-2 plasma-assisted pulsed laser ablation. The band results from a transition between a shallow donor and a deep acceptor induced by phosphorus doping. The activation energy of the acceptor varies with the phosphorus concentration [P] and is 0.34 eV when [P] is 1.7x10(19) cm(-3). Under oxygen-rich conditions, the dominant acceptor in P2O5-doped ZnO may be the zinc vacancy, in agreement with recent first-principles calculations. (c) 2008 American Institute of Physics.

引用

页数：3

共 20 条

[1]

ALLENIC A, 2007, ADV MAT WEINHEIM, V19, P333

[2]

[Anonymous], APPL PHYS A

[3] Diffusion of zinc vacancies and interstitials in zinc oxide [J].

Erhart, Paul ;

Albe, Karsten .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[4] Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN [J].

Germain, M ;

Kartheuser, E ;

Gurskii, AL ;

Lutsenko, EV ;

Marko, IP ;

Pavlovskii, VN ;

Yablonskii, GP ;

Heime, K ;

Heuken, M ;

Schineller, B .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :9827-9834

[5] Transport properties of phosphorus-doped ZnO thin films [J].

Heo, YW ;

Park, SJ ;

Ip, K ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1128-1130

[6] PAIR SPECTRA IN GAP [J].

HOPFIELD, JJ ;

GERSHENZON ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1963, 10 (05) :162-&

[7] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J].

HUANG, K ;

RHYS, A .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078) :406-423

[8]

HUANG K, 2006, MAT RES SOC S P, V891

[9]

Klingshirn c., 1995, SEMICONDUCTOR OPTICS

[10] First-principles study of native point defects in ZnO [J].

Kohan, AF ;

Ceder, G ;

Morgan, D ;

Van de Walle, CG .

PHYSICAL REVIEW B, 2000, 61 (22) :15019-15027

← 1 2 →