Violet luminescence in phosphorus-doped ZnO epitaxial films

被引：22
|
作者：
Allenic, A. [1 ]
Pan, X. Q. [1 ]
Che, Y. [2 ]
Hu, Z. D. [2 ]
Liu, B. [2 ]
机构：
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] IMRA Amer Inc, Funct Mat Grp, Ann Arbor, MI 48105 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期
基金：
中国国家自然科学基金; 美国国家科学基金会;
关键词：
D O I：
10.1063/1.2834696
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A violet luminescence band at 3.1099 eV was observed at 12.5 K in phosphorus-doped ZnO epitaxial films deposited by O-2 plasma-assisted pulsed laser ablation. The band results from a transition between a shallow donor and a deep acceptor induced by phosphorus doping. The activation energy of the acceptor varies with the phosphorus concentration [P] and is 0.34 eV when [P] is 1.7x10(19) cm(-3). Under oxygen-rich conditions, the dominant acceptor in P2O5-doped ZnO may be the zinc vacancy, in agreement with recent first-principles calculations. (c) 2008 American Institute of Physics.
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页数：3
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