Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE

被引：5

作者：

Minami, Yusuke ^{[1
,2
]}

Yoshida, Akinobu ^{[1
,2
]}

Motohisa, Junichi ^{[1
,2
]}

Tomioka, Katsuhiro ^{[1
,2
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, North 14 West 9, Sapporo, Hokkaido, Japan

[2] Hokkaido Univ, RCIQE, North 14 West 9, Sapporo, Hokkaido, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 506卷

关键词：

Nanostructures; Metalorganic vapor phase epitaxy; Selective epitaxy; Nanomaterials; Semiconducting germanium; Semiconducting III-V materials; SOLAR-CELLS; PHOTOLUMINESCENCE;

D O I：

10.1016/j.jcrysgro.2018.10.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth of GaAs nanowires (NWs) on a Ge substrate using selective-area metal-organic vapor phase epitaxy (SA-MOVPE) for solar cell applications. Vertical GaAs NWs were aligned on a non-polar Ge(1 1 1) substrate by implementing As surface treatment and buffer layer growth. The transmission electron microscope (TEM) showed the occurrence of a twin in the NW and no dislocation at the GaAs/Ge interface. Photoluminescence spectra suggested luminescence from a type-II quantum well structure originated from the twin and defect-levels due to Ga vacancies and Ge interdiffusion from the Ge substrate.

引用

页码：135 / 139

页数：5

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