An optoelectronic switch based on a triangular-barrier structure

被引：9

作者：

Guo, DF ^{[1
]}

机构：

[1] Chinese Air Force Acad, Dept Elect Engn, Kangshan, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 10期

关键词：

avalanche multiplication; carrier confinement; negative differential resistance; optoelectronic switch; triangular barrier;

D O I：

10.1109/3.720223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs-InaGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), is reported in this paper. Owing to the avalanche multiplication and hole confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances are observed in the current-voltage (I-V) characteristics under both normal and reverse operation modes. The device also showed a flexible optical function related to the potential barrier height controllable by incident light. The dependency of the carrier transport mechanism on illumination, as well as the I-V characteristics at different temperatures, are investigated.

引用

页码：1882 / 1885

页数：4

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