Synthesis and high-temperature thermoelectric properties of Ni3GaSb and Ni3InSb

被引：6

作者：

Suriwong, Tawat ^{[2
]}

Kurosaki, Ken ^{[1
]}

Thongtem, Somchai ^{[2
]}

Harnwunggmoung, Adul ^{[1
]}

Sugahara, Tohru ^{[1
]}

Plirdpring, Theerayuth ^{[1
]}

Ohishi, Yuji ^{[1
]}

Muta, Hiroaki ^{[1
]}

Yamanaka, Shinsuke ^{[1
,3
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Chiang Mai Univ, Dept Phys & Mat Sci, Fac Sci, Chiang Mai 50200, Thailand

[3] Univ Fukui, Res Inst Nucl Engn, Fukui 9108507, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 09期

关键词：

Ni3GaSb; Ni3InSb; Thermoelectric; Seebeck coefficient; Electrical resistivity; Thermal conductivity; EFFICIENCY; GALLIUM; GROWTH; INDIUM; INSB;

D O I：

10.1016/j.jallcom.2011.01.006

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ni3GaSb and Ni3InSb were successfully synthesized by the direct reaction of Ni and GaSb or InSb. The XRD patterns and the lattice parameters of these compounds were in good agreement with the literature data. The Seebeck coefficient (S), the electrical resistivity (rho), and the thermal conductivity (kappa) of Ni3GaSb and Ni3InSb were examined in the temperature range from room temperature to 1073 K. Both compounds indicated metal-like characteristics. The power factor (S-2 rho(-1)) values increased with temperature and reached maximum at 1073 K. The kappa and the dimensionless figure of merit ZT of both samples increased with temperature. The maximum values of the ZT of Ni3GaSb and Ni3InSb were obtained at 1073K to be 0.022 and 0.023, respectively. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4014 / 4017

页数：4

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