The near- and mid-infrared emission properties of Tm3+-doped GeGaS-CsI chalcogenide glasses

Serials of chalcogenide glasses based on composition of 72GeS(2)-18Ga(2)S(3)-10CsI (in mol%) and doped with high Tm3+ content (up to 10,000 ppm) were prepared, and their luminescence properties were investigated under excitation with 800 nm laser. The influences of doping concentration on Judd-Ofelt intensity parameter Omega(i) spontaneous transition probability A, fluorescence branching ratio beta, and radiative lifetime tau(rad) of Tm3+ in the samples were studied. Four infrared emission bands observed were centered at 1.48, 1.8, 2.3, and 3.8 mu m, corresponding to optical transitions H-3(4) -> F-3(4), F-3(4) -> H-3(6), H-3(4) -> H-3(5) and H-3(5) -> F-3(4), respectively. For 1.0 wt.% Tm3+: doped sample, no concentration quenching was observed and its emission cross-sections at 2.3 and 3.8 mu m calculated by using Fuchtbauer-Ladenburg equation were 6.85 x 10(-21) and 7.66 x 10(-21) cm(-2), respectively. (C) 2010 Elsevier B.V. All rights reserved.