eLeNA: A Parametric CMOS Active-Pixel Sensor for the Evaluation of Reset Noise Reduction Architectures

被引：1

作者：

Anaxagoras, Thalis ^{[1
,2
]}

Kent, Paul ^{[1
]}

Allinson, Nigel ^{[1
]}

Turchetta, Renato ^{[2
]}

Pickering, Tim ^{[2
]}

Maneuski, Dzmitry ^{[3
]}

Blue, Andrew ^{[3
]}

O'Shea, Val ^{[3
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Rutherford Appleton Lab, STFC, Didcot OX11 0QX, Oxon, England

[3] Univ Glasgow, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

active-pixel sensor (APS); correlated double sampling (CDS); kTC; low noise; TEMPORAL NOISE; TECHNOLOGY; CIRCUITS; MAPS;

D O I：

10.1109/TED.2010.2052418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel complementary metal-oxide-semiconductor (CMOS) active-pixel sensor imager that incorporates different reset schemes to achieve lower reset noise levels. The sensor, eLeNA, features a 448 x 512 array with a pixel pitch of 15 mu m, fabricated using a 0.18-mu m CMOS process. Fourteen sections and five different reset methods were employed. Without using pinned diodes, we implanted structures for correlated double sampling. A noise of 6 e- is measured with a conversion gain of 49 mu V/e-. We will discuss various applications for the reset method that achieved the best overall performance, considering leakage current and read noise.

引用

页码：2163 / 2175

页数：13

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