Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

被引：43

作者：

Jolley, Greg ^{[1
]}

Lu, Hao Feng ^{[1
]}

Fu, Lan ^{[1
]}

Tan, Hark Hoe ^{[1
]}

Jagadish, Chennupati ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 12期

基金：

澳大利亚研究理事会;

关键词：

electron-hole recombination; gallium arsenide; III-V semiconductors; indium compounds; semiconductor quantum dots; solar cells; INTERMEDIATE BAND;

D O I：

10.1063/1.3492836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3492836]

引用

页数：3

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