Interface layer thickness effect on the photocurrent of Pt sandwiched polycrystalline ferroelectric Pb(Zr, Ti)O3 films

被引：34

作者：

Cao, Dawei ^{[1
]}

Zhang, Hui

Fang, Liang

Dong, Wen

Zheng, Fengang

Shen, Mingrong

机构：

[1] Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 10期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; ZIRCONATE-TITANATE; BIFEO3;

D O I：

10.1063/1.3488829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on the analysis of the photocurrent behavior of Pt sandwiched Pb(Zr0.2Ti0.8)O-3 (PZT) films, the experimental evidence of top Pt/PZT interface layer thickness effect on the photocurrent is reported. It was well established before that the photocurrent of metal/ferroelectric film is attributed to the height of Schottky contact barrier. However, our results suggest that the photocurrent of Pt/PZT interface contact is determined not only by the barrier height but also by the interface layer thickness, namely, by the built-in electrical field at the interface layer. The mechanism behind such photocurrent phenomenon is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488829]

引用

页数：3

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