Effect of energetic ions on plasma damage of porous SiCOH low-k materials

被引：31

作者：

Kunnen, E. ^{[1
]}

Baklanov, M. R. ^{[1
]}

Franquet, A. ^{[1
]}

Shamiryan, D. ^{[1
]}

Rakhimova, T. V. ^{[1
]}

Urbanowicz, A. M. ^{[1
,2
]}

Struyf, H. ^{[1
]}

Boullart, W. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

densification; ion recombination; ion-surface impact; low-k dielectric thin films; plasma-wall interactions; porous materials; silicon compounds; ATOMIC OXYGEN RECOMBINATION; DIELECTRIC-CONSTANT FILMS; MECHANICAL-PROPERTIES; SURFACE; DEPOSITION; SPECTROSCOPY; CHEMISTRY; POROSITY; SILICA; CARBON;

D O I：

10.1116/1.3372838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma damage of SiCOH low-k films in an oxygen plasma is studied using a transformer coupled plasma reactor. The concentration of oxygen atoms and O-2(+) ions is varied by using three different conditions: (1) bottom power only, (2) bottom and top power, and (3) top power only. After plasma exposure, the low-k samples are characterized by various experimental techniques. It is shown that the ion bombardment induced by the bottom power minimizes the plasma damage by increasing the recombination coefficient of oxygen radicals. Contrary to the expectations, the densification of the top surface by ion radiation was limited. The increase in the recombination coefficient is mainly provided by modification of the pore wall surface and creation of chemically active sites stimulating the recombination of oxygen atoms. The results show that a reduction in plasma damage can be achieved without sealing of low-k top surface. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3372838]

引用

页码：450 / 459

页数：10