Changes in trap parameters in various mixed oxide garnets

被引：11

作者：

Khanin, V. ^{[1
,2
]}

Venevtsev, I. ^{[1
]}

Rodnyi, P. ^{[1
]}

Ronda, C. ^{[2
]}

机构：

[1] Peter Great St Petersburg Polytech Univ, Polytekhnicheskaya 29, St Petersburg 195251, Russia

[2] Philips Res Eindhoven, High Tech Campus 34, NL-5656 AE Eindhoven, Netherlands

来源：

RADIATION MEASUREMENTS | 2016年 / 90卷

关键词：

Scintillator; Garnet; Thermally stimulated luminescence; Defect; Cr impurity; DEFECTS; CRYSTALS; CE3+; 1ST; YAG;

D O I：

10.1016/j.radmeas.2016.02.001

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Shallow and deep electronic traps in various mixed oxide garnet ceramics (Y,Lu,Gd)(3)(Al,Ga)(5)O-12 have been studied by thermally stimulated luminescence spectroscopy in the 80-550 K temperature range. It is shown that the substitution of Al ions by Ga and Y by Gd or Lu in YAG:Ce affects the properties of the traps. It is established that the studied ceramics contain residual impurities of chromium and ytterbium. On the base of the obtained and literature data, a table of the Cr-related trap position relative to the bottom of the conduction band in RE3(Ga-x,Al5-x)(5)O-12:Ce garnets (RE = Lu, Y, Gd and combinations thereof) has been constructed. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：104 / 108

页数：5

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