Changes in trap parameters in various mixed oxide garnets

被引：10
作者：
Khanin, V. [1 ,2 ]
Venevtsev, I. [1 ]
Rodnyi, P. [1 ]
Ronda, C. [2 ]
机构：
[1] Peter Great St Petersburg Polytech Univ, Polytekhnicheskaya 29, St Petersburg 195251, Russia
[2] Philips Res Eindhoven, High Tech Campus 34, NL-5656 AE Eindhoven, Netherlands
来源：
RADIATION MEASUREMENTS | 2016年 / 90卷
关键词：
Scintillator; Garnet; Thermally stimulated luminescence; Defect; Cr impurity; DEFECTS; CRYSTALS; CE3+; 1ST; YAG;
D O I：
10.1016/j.radmeas.2016.02.001
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Shallow and deep electronic traps in various mixed oxide garnet ceramics (Y,Lu,Gd)(3)(Al,Ga)(5)O-12 have been studied by thermally stimulated luminescence spectroscopy in the 80-550 K temperature range. It is shown that the substitution of Al ions by Ga and Y by Gd or Lu in YAG:Ce affects the properties of the traps. It is established that the studied ceramics contain residual impurities of chromium and ytterbium. On the base of the obtained and literature data, a table of the Cr-related trap position relative to the bottom of the conduction band in RE3(Ga-x,Al5-x)(5)O-12:Ce garnets (RE = Lu, Y, Gd and combinations thereof) has been constructed. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：104 / 108
页数：5
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