Dark Current Modeling and Noise Analysis in Quantum Dot Infrared Photodetectors

被引：26
作者：
Mahmoodi, Ali [1 ]
Jahromi, Hamed Dehdashti [1 ]
Sheikhi, Mohammad Hossein [1 ]
机构：
[1] Shiraz Univ, Sch Elect & Comp Engn, Dept Commun & Elect, Res Lab Fabricat Adv Semicond Devices, Shiraz 7193616511, Iran
来源：
IEEE SENSORS JOURNAL | 2015年 / 15卷 / 10期
关键词：
Dark current; field-assisted tunneling; noise; thermoexcitaion;
D O I：
10.1109/JSEN.2015.2443014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a physical model to study the dark current and noise characteristics of quantum-dot infrared photodetectors (QDIPs). This model considers both carrier's thermoexcitaion and carrier's field-assisted tunneling, which are the main origin of dark current and noise in QDIPs. We use this model to analyze the effect of different structural parameters, such as QDs lateral size and density of QD, and environmental parameters, such as bias voltage and operating temperature on the dark current and the noise of QDIP. The theoretical results obtained from our model are in excellent agreement with reported experimental data. Therefore, the validity of the model is proven for these reasons. This model can be extended to other quantum structure detectors to evaluate the noise and dark current characteristics.
引用
收藏
页码：5504 / 5509
页数：6
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