Large Band Gap Opening between Graphene Dirac Cones Induced by Na Adsorption onto an Ir Superlattice

被引：79

作者：

Papagno, Marco ^{[1
]}

Rusponi, Stefano ^{[2
]}

Sheverdyaeva, Polina Makarovna ^{[1
]}

Vlaic, Sergio ^{[2
]}

Etzkorn, Markus ^{[2
]}

Pacile, Daniela ^{[1
,3
,4
]}

Moras, Paolo ^{[1
]}

Carbone, Carlo ^{[1
]}

Brune, Harald ^{[2
]}

机构：

[1] CNR, Ist Struttura Mat, Trieste, Italy

[2] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, Stn 3, CH-1015 Lausanne, Switzerland

[3] Univ Calabria, Dipartimento Fis, I-87036 Arcavacata Di Rende, CS, Italy

[4] INFN Grp Collegato Cosenza, I-87036 Arcavacata Di Rende, CS, Italy

来源：

ACS NANO | 2012年 / 6卷 / 01期

基金：

瑞士国家科学基金会;

关键词：

Na absorption; Ir superlattice; graphene; photoemission; STM; ELECTRONIC-STRUCTURE; TUNABLE BANDGAP; BORON-NITRIDE; GRAPHITE;

D O I：

10.1021/nn203841q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate the effects of Na adsorption on the electronic structure of bare and Ir cluster superlattice-covered epitaxial graphene on Ir(111) using angle-resolved photoemission spectroscopy and scanning tunneling microscopy. At Na saturation coverage, a massive charge migration from ISM? sodium atoms to graphene raises the graphene Fermi level by similar to 1.4 eV relative to its neutrality point. We find that Na is adsorbed on top of the graphene layer, and when coadsorbed onto an Ir cluster superlattice, it results In the opening of a large band gap of Delta(Na/Ir/G) = 740 meV, comparable to the one of Ge and with preserved high group velocity of the charge carriers.

引用

页码：199 / 204

页数：6

共 53 条

[1]

Bai JW, 2010, NAT NANOTECHNOL, V5, P190, DOI [10.1038/NNANO.2010.8, 10.1038/nnano.2010.8]

[2]

Balog R, 2010, NAT MATER, V9, P315, DOI [10.1038/nmat2710, 10.1038/NMAT2710]

[3] Photoemission study of K on graphite [J].

Bennich, P ;

Puglia, C ;

Brühwiler, PA ;

Nilsson, A ;

Maxwell, AJ ;

Sandell, A ;

Mårtensson, N ;

Rudolf, P .

PHYSICAL REVIEW B, 1999, 59 (12) :8292-8304

[4] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[5] Electron-phonon coupling in potassium-doped graphene: Angle-resolved photoemission spectroscopy [J].

Bianchi, M. ;

Rienks, E. D. L. ;

Lizzit, S. ;

Baraldi, A. ;

Balog, R. ;

Hornekaer, L. ;

Hofmann, Ph. .

PHYSICAL REVIEW B, 2010, 81 (04)

[6] Quasiparticle dynamics in graphene [J].

Bostwick, Aaron ;

Ohta, Taisuke ;

Seyller, Thomas ;

Horn, Karsten ;

Rotenberg, Eli .

NATURE PHYSICS, 2007, 3 (01) :36-40

[7] Atomically precise bottom-up fabrication of graphene nanoribbons [J].

Cai, Jinming ;

Ruffieux, Pascal ;

Jaafar, Rached ;

Bieri, Marco ;

Braun, Thomas ;

Blankenburg, Stephan ;

Muoth, Matthias ;

Seitsonen, Ari P. ;

Saleh, Moussa ;

Feng, Xinliang ;

Muellen, Klaus ;

Fasel, Roman .

NATURE, 2010, 466 (7305) :470-473

[8] Energy gap opening in submonolayer lithium on graphene: Local density functional and tight-binding calculations [J].

Farjam, M. ;

Rafii-Tabar, H. .

PHYSICAL REVIEW B, 2009, 79 (04)

[9] Pinning of graphene to Ir(111) by flat Ir dots [J].

Feibelman, Peter J. .

PHYSICAL REVIEW B, 2008, 77 (16)

[10] Atomic structure of monolayer graphite formed on Ni(111) [J].

Gamo, Y ;

Nagashima, A ;

Wakabayashi, M ;

Terai, M ;

Oshima, C .

SURFACE SCIENCE, 1997, 374 (1-3) :61-64

← 1 2 3 4 5 6 →