Colossal magnetoresistance manganese oxides

被引：0

作者：

Renard, JP ^{[1
]}

机构：

[1] Inst Elect Fondamentale, CNRS URA 22, F-91405 Orsay, France

来源：

VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1998年 / 53卷 / 290期

关键词：

manganese oxides; magnetic properties; magnetoresistance; metal-insulator transition; thin films;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The manganese oxides of general formula RE1-xMxMnO3 (RE = rare earth, M = Ca, Sr, Ba, Pb) have remarkable interrelated structural, magnetic and transport properties induced by the mixed valency (3+-4+) of the Mn ions. Tn particular, they exhibit very large negative magnetoresistance, often called colossal magnetoresistance (CMR), in the vicinity of metal-insulator transition, for certain compositions. A few important features of the physics of these oxides and the mechanism of CMR are here reported and exemplified and the potential applications of the thin film oxides are reviewed.

引用

页码：819 / +

页数：21

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