Colossal magnetoresistance manganese oxides

被引：0
作者：
Renard, JP [1 ]
机构：
[1] Inst Elect Fondamentale, CNRS URA 22, F-91405 Orsay, France
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1998年 / 53卷 / 290期
关键词：
manganese oxides; magnetic properties; magnetoresistance; metal-insulator transition; thin films;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The manganese oxides of general formula RE1-xMxMnO3 (RE = rare earth, M = Ca, Sr, Ba, Pb) have remarkable interrelated structural, magnetic and transport properties induced by the mixed valency (3+-4+) of the Mn ions. Tn particular, they exhibit very large negative magnetoresistance, often called colossal magnetoresistance (CMR), in the vicinity of metal-insulator transition, for certain compositions. A few important features of the physics of these oxides and the mechanism of CMR are here reported and exemplified and the potential applications of the thin film oxides are reviewed.
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收藏
页码：819 / +
页数：21
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