Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films

被引：11

作者：

Kim, H. ^{[1
]}

Osofsky, M. ^{[1
]}

Auyeung, R. C. Y. ^{[1
]}

Pique, A. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期

关键词：

OXIDE THIN-FILMS;

D O I：

10.1063/1.3700864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe/Zr-codoped In2O3 thin films were grown on yttria stabilized zirconia substrates by pulsed laser deposition. The deposited films exhibited ferromagnetism at room temperature with strong magnetic anisotropy, which was influenced by a magnetostriction effect under tensile stress (i.e., c/a > 1). Both the saturation magnetization and anomalous Hall effect (AHE) were enhanced by increasing charge carrier density via Zr-doping. Our observations, including AHE and magnetic anisotropy, provide strong evidence of intrinsic ferromagnetism at room temperature in these materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700864]

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页数：4

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