Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors

被引：184

作者：

Chen, Wei-Tsung ^{[1
,2
]}

Lo, Shih-Yi ^{[1
,2
]}

Kao, Shih-Chin ^{[1
,2
]}

Zan, Hsiao-Wen ^{[1
,2
]}

Tsai, Chuang-Chuang ^{[1
,2
]}

Lin, Jian-Hong ^{[3
]}

Fang, Chun-Hsiang ^{[3
]}

Lee, Chung-Chun ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Inst Electrooptic Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[3] Au Optron Corp, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 11期

关键词：

Bias stress; IGZO; stability;

D O I：

10.1109/LED.2011.2165694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 x 10(4) and 371 x 10(4) s, respectively, is achieved by annealing and passivation.

引用

页码：1552 / 1554

页数：3

共 15 条

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