Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors

被引：184
作者：
Chen, Wei-Tsung [1 ,2 ]
Lo, Shih-Yi [1 ,2 ]
Kao, Shih-Chin [1 ,2 ]
Zan, Hsiao-Wen [1 ,2 ]
Tsai, Chuang-Chuang [1 ,2 ]
Lin, Jian-Hong [3 ]
Fang, Chun-Hsiang [3 ]
Lee, Chung-Chun [3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Inst Electrooptic Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan
[3] Au Optron Corp, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 11期
关键词：
Bias stress; IGZO; stability;
D O I：
10.1109/LED.2011.2165694
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 x 10(4) and 371 x 10(4) s, respectively, is achieved by annealing and passivation.
引用
收藏
页码：1552 / 1554
页数：3
相关论文
共 15 条
[1]   Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory [J].
Chen, Min-Chen ;
Chang, Ting-Chang ;
Huang, Sheng-Yao ;
Chen, Shih-Ching ;
Hu, Chih-Wei ;
Tsai, Chih-Tsung ;
Sze, Simon M. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) :II191-II193
[2]   Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress [J].
Ghaffarzadeh, Khashayar ;
Nathan, Arokia ;
Robertson, John ;
Kim, Sangwook ;
Jeon, Sanghun ;
Kim, Changjung ;
Chung, U-In ;
Lee, Je-Hun .
APPLIED PHYSICS LETTERS, 2010, 97 (11)
[3]   Operating Temperature Trends in Amorphous In-Ga-Zn-O Thin-Film Transistors [J].
Hoshino, Ken ;
Wager, John F. .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :818-820
[4]   Native point defects in ZnO [J].
Janotti, Anderson ;
Van de Walle, Chris G. .
PHYSICAL REVIEW B, 2007, 76 (16)
[5]   Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].
Jeong, Jae Kyeong ;
Yang, Hui Won ;
Jeong, Jong Han ;
Mo, Yeon-Gon ;
Kim, Hye Dong .
APPLIED PHYSICS LETTERS, 2008, 93 (12)
[6]   Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].
Kang, Donghun ;
Lim, Hyuck ;
Kim, Changjung ;
Song, Ihun ;
Park, Jaechoel ;
Park, Youngsoo ;
Chung, JaeGwan .
APPLIED PHYSICS LETTERS, 2007, 90 (19)
[7]   Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array [J].
Kim, Byeong Hoon ;
Byun, Chun Won ;
Yoon, Sung-Min ;
Yang, Shin Hyuk ;
Jung, Soon-Won ;
Ryu, Min Ki ;
Park, Sang-Hee Ko ;
Hwang, Chi-Sun ;
Cho, Kyoung-Ik ;
Kwon, Oh-Sang ;
Park, Eun-Suk ;
Oh, Him Chan ;
Kim, Kyoung-Hwan ;
Park, Kee Chan .
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (03) :324-326
[8]   Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display [J].
Kwon, Jang Yeon ;
Son, Kyoung Seok ;
Jung, Ji Sim ;
Kim, Tae Sang ;
Ryu, Myung Kwan ;
Park, Kyung Bae ;
Yoo, Byung Wook ;
Kim, Jung Woo ;
Lee, Young Gu ;
Park, Kee Chan ;
Lee, Sang Yoon ;
Kim, Jong Min .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (12) :1309-1311
[9]   Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress [J].
Lee, Sangwon ;
Jeon, Kichan ;
Park, Jun-Hyun ;
Kim, Sungchul ;
Kong, Dongsik ;
Kim, Dong Myong ;
Kim, Dae Hwan ;
Kim, Sangwook ;
Kim, Sunil ;
Hur, Jihyun ;
Park, Jae Chul ;
Song, Ihun ;
Kim, Chang Jung ;
Park, Youngsoo ;
Jung, U-In .
APPLIED PHYSICS LETTERS, 2009, 95 (13)
[10]   Gate-bias stress in amorphous oxide semiconductors thin-film transistors [J].
Lopes, M. E. ;
Gomes, H. L. ;
Medeiros, M. C. R. ;
Barquinha, P. ;
Pereira, L. ;
Fortunato, E. ;
Martins, R. ;
Ferreira, I. .
APPLIED PHYSICS LETTERS, 2009, 95 (06)
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