A Novel De-embedding Technique for On-Wafer Characterization of RF CMOS

被引：1

作者：

Loo, X. S. ^{[1
]}

Yeo, K. S. ^{[1
]}

Chew, K. W. J. ^{[1
]}

Chan, L. H. K. ^{[1
]}

Ong, S. N. ^{[1
]}

Do, M. A. ^{[1
]}

Boon, C. C. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect Elect Engn, Singapore 639798, Singapore

来源：

2009 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC 2009) | 2009年

关键词：

De-embedding; Fixture parasitic; High frequency characterization; RF CMOS; Scattering parameters; PARAMETER; NOISE;

D O I：

10.1109/SOCDC.2009.5423849

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel de-embedding technique based on general fixture model is proposed to accurately de-embed the test fixture parasitic for characterization of RF CMOS at high frequency. The method is able to avoid over-de-embedding errors that exist in conventional techniques by utilizing three Thru structures of zero length and one Open dummy test structures for accurate extraction of fixture parasitic. The de-embedding result is verified with Thru line replaced as intrinsic device and has been shown matching closer to the actual intrinsic Thru line than other compared techniques for frequency of up to 50 GHz.

引用

页码：29 / 32

页数：4

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