Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs

被引：23
作者：
Ohyama, H
Simoen, E
Kuroda, S
Claeys, C
Takami, Y
Hakata, T
Sunaga, H
机构：
[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan
[2] IMEC, B-3001 Louvain, Belgium
[3] Fujitsu Quantum Devices Ltd, Yamanashi 4093800, Japan
[4] Rikkyo Univ, Kanagawa 2400101, Japan
[5] Takasaki JAERI, Gunma 3701207, Japan
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 06期
关键词：
D O I：
10.1109/23.736540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Irradiation damage and its recovery behavior resulting from thermal annealing in InGaP/InGaAs pseudomorphic HEMTs, subjected to a 20-MeV alpha ray and 220-MeV carbon, are studied for the first time. The drain current and effective mobility decrease after irradiation, while the threshold voltage increases in positive direction. The degradation of device performance increases with increasing fluence. The decrease of the mobility is thought to be due to the scattering of channel electrons with the induced lattice defects and also to the decrease of the electron density in the two dimensional electron gas (2DEG) region. The influence of the radiation source on the degradation and recovery is discussed by comparison with 1-MeV electron and 1-MeV fast neutron exposures with respect to the number of knock-on atoms and the nonionizing energy loss (NIEL). Isochronal thermal annealing for temperatures ranging from 75 to 300 degrees C shows that the device performance degraded by the irradiation recovers completely.
引用
收藏
页码：2861 / 2866
页数：6
相关论文
共 11 条
[1]  
GLASTONE S, 1952, ELEMENTS NUCL THEORY
[2]  
HARA H, 1980, BEHAV THEORY MOS TRA
[3]  
KICHIN GH, 1955, REPT PROGR PHYS, V1, P1
[4]  
Kudou T., 1998, P MAT RES SOC 1997 F, V487, P471
[5]  
Kuroda S., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P323, DOI 10.1109/IEDM.1992.307370
[6]  
MATSUZAKI K, 1997, IN PRESS P 4 EUR CON
[7]  
MIMURA T, 1980, JPN J APPL PHYS, V19, P225
[8]   Degradation and recovery of In0.53Ga0.47As photodiodes by 1-MeV fast neutrons [J].
Ohyama, H ;
Vanhellemont, J ;
Takami, Y ;
Hayama, K ;
Kudou, T ;
Hakata, T ;
Kohiki, S ;
Sunaga, H .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) :3019-3026
[9]   RADIATION EFFECTS IN HIGH ELECTRON-MOBILITY TRANSISTORS - TOTAL DOSE GAMMA-IRRADIATION [J].
OLOUGHLIN, MJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1808-1811
[10]   DAMAGE CORRELATIONS IN SEMICONDUCTORS EXPOSED TO GAMMA-RADIATION, ELECTRON-RADIATION AND PROTON-RADIATION [J].
SUMMERS, GP ;
BURKE, EA ;
SHAPIRO, P ;
MESSENGER, SR ;
WALTERS, RJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1372-1379
12