High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

被引：42

作者：

Baik, Jeong Min ^{[1
]}

Kim, Myung Hwa ^{[1
]}

Larson, Christopher ^{[1
]}

Chen, Xihong ^{[1
]}

Guo, Shujing ^{[2
]}

Wodtke, Alec M. ^{[1
]}

Moskovits, Martin ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Chem & Biochem, Santa Barbara, CA 93106 USA

[2] Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2949086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a facile method for synthesizing single-crystal rutile TiO2 nanowires using atmospheric-pressure, chemical vapor deposition with Ti and TiO as precursors. The synthesis is found to depend critically on the predeposition of a layer of metallic Ti on the Ni catalysts layer. The omission of this step seems previously to have impeded the efficient synthesis of titania nanowires. Single-nanowire field-effect transistors showed the TiO2 nanowires to be n-type semiconductors with conductance activation energy of similar to 58 meV. (C) 2008 American Institute of Physics.

引用

页数：3

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