Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation

被引：5
|
作者：
Poudel, P. R. [1 ]
Rout, B. [1 ]
Diercks, D. R. [2 ]
Paramo, J. A. [3 ]
Strzhemechny, Y. M. [3 ]
Mcdaniel, F. D. [1 ]
机构：
[1] Univ N Texas, Dept Phys, Ion Beam Modificat & Anal Lab, Denton, TX 76203 USA
[2] Colorado Sch Mines, Dept Met & Mat Engn, Golden, CO 80401 USA
[3] Texas Christian Univ, Dept Phys & Astron, Ft Worth, TX 76129 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 09期
关键词：
SiC; ion implantation; amorphization; SILICON-CARBIDE; BEAM SYNTHESIS; CARBON IMPLANTATION; GROWTH; LAYERS; TECHNOLOGY; EMISSION; FIELD; ELECTRONICS; RESOLUTION;
D O I：
10.1007/s11664-011-1695-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic study of the formation of buried beta-SiC structures by carbon ion implantation into Si followed by high-temperature thermal annealing has been carried out. A high fluence of carbon ions (8 9 10 17 atoms/cm(2)) was implanted at 65 keV energy. Formation of the crystalline beta-SiC phase was monitored by Fourier-transform infrared (FTIR) spectroscopy, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) techniques. The implanted samples were annealed at 900 degrees C and 1100 degrees C to observe the effects of annealing temperature on the formation of crystalline beta-SiC. Formation of crystalline beta-SiC was clearly observed in the sample annealed at 1100 degrees C in a flowing nitrogen environment for a period of 1 h. Graphitic carbon clusters were observed at the implanted carbon profile peak position by XPS depth profile measurements. Various structural defects such as grain boundaries were also visualized in the annealed sample by high-resolution TEM.
引用
收藏
页码：1998 / 2003
页数：6
相关论文
共 50 条
  • [1] Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation
    P. R. Poudel
    B. Rout
    D. R. Diercks
    J. A. Paramo
    Y. M. Strzhemechny
    F. D. Mcdaniel
    Journal of Electronic Materials, 2011, 40 : 1998 - 2003
  • [2] Fluence dependant formation of β-SiC by ion implantation and thermal annealing
    P. R. Poudel
    B. Rout
    D. R. Diercks
    Y. M. Strzhemechny
    F. D. Mcdaniel
    Applied Physics A, 2011, 104 : 183 - 188
  • [3] Fluence dependant formation of β-SiC by ion implantation and thermal annealing
    Poudel, P. R.
    Rout, B.
    Diercks, D. R.
    Strzhemechny, Y. M.
    Mcdaniel, F. D.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 104 (01): : 183 - 188
  • [4] Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing
    Schubert, C
    Kaiser, U
    Hedler, A
    Wesch, W
    Gorelik, T
    Glatzel, U
    Kräusslich, J
    Wunderlich, B
    Hess, G
    Goetz, K
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1520 - 1524
  • [5] Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing
    Dobrovolskiy, S.
    Yakshin, A. E.
    Tichelaar, F. D.
    Verhoeven, J.
    Louis, E.
    Bijkerk, F.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (06): : 560 - 567
  • [6] Formation of a buried soft layer in SiC for ''compliant substrate'' by ion implantation
    Lioubtchenko, M
    Hunn, J
    Suvkhanov, A
    Parikh, N
    Bray, D
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 265 - 270
  • [7] Effects of implantation temperature and thermal annealing on the Ga+ ion beam induced optical contrast formation in a-SiC:H
    Tsvetkova, T.
    Wright, C. D.
    Kitova, S.
    Bischoff, L.
    Zuk, J.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 307 : 71 - 76
  • [8] Formation of microvoids in MgO by helium ion implantation and thermal annealing
    Delft Univ of Technology, Delft, Netherlands
    Nucl Instrum Methods Phys Res Sect B, 1-4 (768-772):
  • [9] The formation of microvoids in MgO by helium ion implantation and thermal annealing
    van Veen, A
    Schut, H
    Fedorov, AV
    Labohm, F
    Neeft, EAC
    Konings, RJM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 768 - 772
  • [10] FORMATION OF AS PRECIPITATES IN GAAS BY ION-IMPLANTATION AND THERMAL ANNEALING
    CLAVERIE, A
    NAMAVAR, F
    LILIENTALWEBER, Z
    APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1271 - 1273
12345