A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations

被引：35

作者：

Padovani, Andrea ^{[1
,2
,3
]}

Arreghini, Antonio ^{[4
]}

Vandelli, Luca ^{[1
,3
]}

Larcher, Luca ^{[1
,3
]}

Van den Bosch, Geert ^{[4
]}

Pavan, Paolo ^{[3
,5
]}

Van Houdt, Jan ^{[4
]}

机构：

[1] Univ Modena & Reggio Emilia, DISMI, I-42122 Reggio Emilia, Italy

[2] INTERMECH Ctr, I-42122 Reggio Emilia, Italy

[3] Italian Univ Nanoelect Team, I-40125 Bologna, Italy

[4] IMEC, B-3001 Louvain, Belgium

[5] Univ Modena & Reggio Emilia, DII, I-41100 Reggio Emilia, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期

关键词：

Charge separation (CS); charge-trapping devices; device modeling; device physics; erase efficiency; nitride; TANOS erase; TANOS memories; TRANSIENT ANALYSIS METHOD; TRAPPED CHARGE; ELECTRON; IONIZATION; MECHANISM; EMISSION;

D O I：

10.1109/TED.2011.2159722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate and quantify the role played by electrons and holes during the erase operation of TANOS memories by means of charge separation experiments and physics-based simulations. Results demonstrate that electron emission via trap-to-band tunneling dominates the first part of the erase operation, whereas hole injection prevails in the remaining part of the transient. In addition, we show that the efficiency of the erase operation is high and constant mainly because of the high energy offset between nitride and alumina valence bands. Our results clearly identify the physical mechanisms responsible for TANOS erase and allow deriving some important guidelines for the optimization of this operation.

引用

页码：3147 / 3155

页数：9

共 46 条

[1] Internal photoemission at interfaces of high-κ insulators with semiconductors and metals [J].