Gallium nitride synthesis using lithium metal as a nitrogen fixant

被引:13
作者
Barry, ST
Ruoff, SA
Ruoff, AL [1 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Crystal Syst Cpds, Freeville, NY 13068 USA
关键词
D O I
10.1021/cm980021g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Micron-sized particles of gallium nitride were synthesized at temperatures as low as 300 degrees C under ammonia in anhydrous conditions. Two different syntheses were investigated: compound 1 was synthesized using a physical mixture of gallium and lithium under flowing ammonia; compound 2 was synthesized using a gallium/lithium alloy under flowing ammonia. These two methods relied on the presence of lithium metal acting as a nitrogen-fixing and transport agent for metallic gallium. Powder X-ray diffraction demonstrated the purity and crystalline nature of the resulting white gallium nitride; it was found to exhibit extraordinary crystallinity considering its formation conditions. Elemental analysis also determined the purity of 1 and 2 and showed an absence of the lithium impurity in the former, as contrasted with 0.23% Li in the latter. SEM demonstrated the particle sizes of 1 and 2 to be on the micron scale.
引用
收藏
页码:2571 / 2574
页数:4
相关论文
共 18 条
[1]   Low pressure synthesis of bulk, polycrystalline gallium nitride [J].
Argoitia, A ;
Hayman, CC ;
Angus, JC ;
Wang, L ;
Dyck, JS ;
Kash, K .
APPLIED PHYSICS LETTERS, 1997, 70 (02) :179-181
[2]   Synthesis routes and characterization of high-purity, single-phase gallium nitride powders [J].
Balkas, CM ;
Davis, RF .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) :2309-2312
[3]   DESIGNATED MOLECULAR DECONSTRUCTION - THE FACILE TRANSFORMATION OF GA(N(SIME3)2)(OSIME3)2PY (PY = PYRIDINE) TO GAN [J].
BARRY, ST ;
RICHESON, DS .
CHEMISTRY OF MATERIALS, 1994, 6 (12) :2220-2221
[4]  
Cotton F. A., 1980, ADV INORGANIC CHEM
[5]   On GaN crystallization by ammonothermal method [J].
Dwilinski, R ;
Baranowski, JM ;
Kaminska, M ;
Doradzinski, R ;
Garczynski, J ;
Sierzputowski, L .
ACTA PHYSICA POLONICA A, 1996, 90 (04) :763-766
[6]   GROWTH AND MORPHOLOGY OF GAN [J].
EJDER, E .
JOURNAL OF CRYSTAL GROWTH, 1974, 22 (01) :44-46
[7]  
*GAN JOINT COMM PO, 021078 GAN JOINT COM
[8]   Nitrogen compounds of gallium III Gallic nitride [J].
Johnson, WC ;
Parsons, JB ;
Crew, MC .
JOURNAL OF PHYSICAL CHEMISTRY, 1932, 36 (07) :2651-2654
[9]   EQUILIBRIUM PRESSURE OF N-2 OVER GAN AND HIGH-PRESSURE SOLUTION GROWTH OF GAN [J].
KARPINSKI, J ;
JUN, J ;
POROWSKI, S .
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :1-10
[10]   The microstructure of gallium nitride monocrystals grown at high pressure [J].
Leszczynski, M ;
Grzegory, I ;
Teisseyre, H ;
Suski, T ;
Bockowski, M ;
Jun, J ;
Baranowski, JM ;
Porowski, S ;
Domagala, J .
JOURNAL OF CRYSTAL GROWTH, 1996, 169 (02) :235-242