Properties of transparent yttrium oxide dielectric films prepared by sol-gel process

被引：25

作者：

Tsay, Chien-Yie ^{[1
]}

Cheng, Chia-Hsiang ^{[1
]}

Wang, Yu-Wu ^{[2
]}

机构：

[1] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 407, Taiwan

[2] Natl Changhua Univ Educ, Grad Inst Photon, Changhua 500, Taiwan

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷 / 02期

关键词：

Films; Sol-gel processes; Dielectric properties; Y2O3; TEMPERATURE FABRICATION; GATE INSULATORS; THIN-FILMS; TRANSISTORS;

D O I：

10.1016/j.ceramint.2011.09.060

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this research, yttrium oxide (Y2O3) gate dielectric films were deposited onto alkali-free glass substrates by a sol gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol gel derived Y2O3 films. These sol gel films were preheated at 300 degrees C for 10 min, and then annealed at 400-550 degrees C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450-550 degrees C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y2O3 films were over 88.0% in the visible range. The electrical properties of the Y2O3 films were analyzed by capacitance voltage (C V) and current-voltage (I-V) measurements. Films annealed at 500 degrees C yielded the lowest leakage current density, 1.8 x 10(-7) A/cm(2), at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：1677 / 1682

页数：6

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