Strong electron-polarized atom chain in amorphous phase-change memory Ge-Sb-Te alloy

被引：27
作者：
Chen, Nian-Ke [1 ]
Li, Xian-Bin [1 ,3 ]
Wang, Xue-Peng [1 ]
Tian, Wei Quan [2 ]
Zhang, Shengbai [1 ,3 ]
Sun, Hong-Bo [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qjanjin St, Changchun 130012, Jilin, Peoples R China
[2] Chongqing Univ, Coll Chem & Chem Engn, Huxi Campus, Chongqing 401331, Peoples R China
[3] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
来源：
ACTA MATERIALIA | 2018年 / 143卷
基金：
中国国家自然科学基金;
关键词：
Amorphous alloy; Structure-property relation; Phase-change memory; First-principles calculations; Atom chain; TOTAL-ENERGY CALCULATIONS; THIN-FILMS; CRYSTALLIZATION;
D O I：
10.1016/j.actamat.2017.10.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Phase-change memory (PCM) material is the promising material system for nonvolatile-memory technology. Performance optimization of PCM device urgently requires the deeper clarification of its material "Gene". In this study, through first-principles calculations, p-orbital-aligned atom chains are identified to play important roles in governing optoelectronic reflectivity in amorphous Ge2Sb2Te5. These atom chains make the electronic state of the amorphous Ge2Sb2Te5 hold strong electron-polarized components, thereby governing the optical property. The present study offers a new understanding of "Gene" for PCM materials which benefit the material design and the performance improvement of PCM devices. (C) 2017 Published by Elsevier Ltd on behalf of Acta Materialia Inc.
引用
收藏
页码：102 / 106
页数：5
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